Atomic-resolved depth profile of strain and cation intermixing around LaAlO3/SrTiO3 interfaces

نویسندگان

  • H. Zaid
  • M. H. Berger
  • D. Jalabert
  • M. Walls
  • R. Akrobetu
  • I. Fongkaew
  • W. R. L. Lambrecht
  • N. J. Goble
  • X. P. A. Gao
  • P. Berger
  • A. Sehirlioglu
چکیده

Novel behavior has been observed at the interface of LaAlO3/SrTiO3 heterostructures such as two dimensional metallic conductivity, magnetic scattering and superconductivity. However, both the origins and quantification of such behavior have been complicated due to an interplay of mechanical, chemical and electronic factors. Here chemical and strain profiles near the interface of LaAlO3/SrTiO3 heterostructures are correlated. Conductive and insulating samples have been processed, with thicknesses respectively above and below the commonly admitted conductivity threshold. The intermixing and structural distortions within the crystal lattice have been quantitatively measured near the interface with a depth resolution of unit cell size. A strong link between intermixing and structural distortions at such interfaces is highlighted: intermixing was more pronounced in the hetero-couple with conductive interface, whereas in-plane compressive strains extended deeper within the substrate of the hetero-couple with the insulating interface. This allows a better understanding of the interface local mechanisms leading to the conductivity.

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Hidden lattice instabilities as origin of the conductive interface between insulating LaAlO3 and SrTiO3

The metallic interface between insulating LaAlO3 and SrTiO3 opens up the field of oxide electronics. With more than a decade of researches on this heterostructure, the origin of the interfacial conductivity, however, remains unsettled. Here we resolve this long-standing puzzle by atomic-scale observation of electron-gas formation for screening hidden lattice instabilities, rejuvenated near the ...

متن کامل

Structural comparison of n-type and p-type LaAlO3/SrTiO3 interfaces.

Using a surface x-ray diffraction technique, we investigated the atomic structure of two types of interfaces between LaAlO3 and SrTiO3, that is, p-type (SrO/AlO2) and n-type (TiO2/LaO) interfaces. Our results demonstrate that the SrTiO3 in the sample with the n-type interface has a large polarized region, while that with the p-type interface has a limited polarized region. In addition, atomic i...

متن کامل

Instability, intermixing and electronic structure at the epitaxial LaAlO3/SrTiO3(001) heterojunction

The question of stability against diffusional mixing at the prototypical LaAlO3/SrTiO3(001) interface is explored using a multi-faceted experimental and theoretical approach. We combine analytical methods with a range of sensitivities to elemental concentrations and spatial separations to investigate interfaces grown using on-axis pulsed laser deposition. We also employ computational modeling b...

متن کامل

Atomic-layer-deposited LaAlO3/SrTiO3 all oxide field-effect transistors

We have demonstrated well-behaved accumulation-mode all oxide NMOSFETs with amorphous atomic-layer-deposited (ALD) LaAlO3 gate dielectric stacks on crystalline SrTiO3 substrates. A maximum drain current exceeding 10 mA/mm has been obtained on a 3.75μm-gate-length device, proving a very conductive channel can be formed at the oxide-oxide interface. Four different gate dielectric stacks, which ar...

متن کامل

Photoresponse dynamics in amorphous-LaAlO3/SrTiO3 interfaces

The time-resolved photoconductance of amorphous and crystalline LaAlO3/SrTiO3 interfaces, both hosting an interfacial 2-dimensional electron gas, is investigated under irradiation by variable-wavelengths, visible or ultraviolet photons. Unlike bare SrTiO3 single crystals, showing relatively small photoconductance effects, both kinds of interfaces exhibit an intense and highly persistent photoco...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره 6  شماره 

صفحات  -

تاریخ انتشار 2016